| No. | Partie # | Fabricant | Description | Fiche Technique |
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Intersil Corporation |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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Fairchild Semiconductor |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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