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HFP640 | 200V N-Channel MOSFET HFP640
July 2005
HFP640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very |
SemiHow |
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HFP640 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These power MOSFETs is designed for high voltage, high speed power switching appl |
Shantou Huashan |
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HFP640A | N-Channel MOSFET HFP640A_HFS640A
Oct 2016
HFP640A / HFS640A
200V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Char |
SemiHow |
|
HFP640G | N-Channel MOSFET HFP640G
Feb 2015
HFP640G
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very |
SemiHow |
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