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SemiHow |
600V N-Channel Super Junction MOSFET Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 40 95 109 Unit V A Pȍ nC Application Switch Mode |
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