HBT169M डाटा शीट PDF( Datasheet )

HBT169M THYRISTORS Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4 HBT169M THYRISTORS Description Glass passivated, sensitive gate thyristors in a plas

SMD Type Silicon Controlled Rectifiers HBT169M Thyristor Features Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A