डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HBR10200C | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10200
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
200 V 175 ℃ 0.75V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
|
HBR10200CR | SCHOTTKY BARRIER DIODE 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE
HBR10200
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10(2×5)A
200 V 175 ℃ 0.75V (@Tj=125℃)
用途
z 高频开关� |
Jilin Sino |
|
HBR10200CT | Schottky Barrier Rectifier Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche te |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |