डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HAT2200WP | Silicon N-Channel Power MOSFET HAT2200WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 22 m typ. (at VGS = 10 V)
Outl |
Renesas Technology |
|
HAT2200WP | Silicon N-Channel Power MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |