डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HAT1127H | Silicon P-Channel Power MOSFET HAT1127H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Ultra Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = |
Renesas Technology |
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HAT1127H | Silicon P-Channel Power MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |