HAT1016R डाटा शीट PDF( Datasheet )

HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-471 D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High dens

HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: P