डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H7N0312AB | Silicon N-Channel MOSFET H7N0312AB
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 2.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE |
Renesas Technology |
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H7N0312AB | Silicon N-Channel MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |