डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H7N0308CF | Silicon N-Channel MOSFET H7N0308CF
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 3.8 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE |
Renesas |
|
H7N0308CF | Silicon N-Channel MOSFET H7N0308CF
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline |
Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |