| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hynix Semiconductor |
4Gb DDR3L SDRAM and Ordering Information FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • Average Refresh Cycle (Tcase of 0 oC~ 95 oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ |
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