डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H01N45A | N-Channel Power Field Effect Transistor HI-SINCERITY
MICROELECTRONICS CORP.
H01N45A
N-Channel Power Field Effect Transistor
Features
• Typical RDS(on)=4.1Ω • Extremely High dv/dt Capability • 100% Avalanche Tested • Gate Charge Minimized |
HI-SINCERITY |
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H01N45A | N-Channel Power Field Effect Transistor | HI-SINCERITY |
www.DataSheet.in | 2017 | संपर्क |