डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT8G151 | Silicon N-Channel IGBT TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G151
GT8G151
Strobe Flash Applications
• Enhancement-mode • Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) • Peak collector |
Toshiba |
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GT8G151 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |