डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT80J101A | Silicon N-Channel IGBT GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Volta |
Toshiba Semiconductor |
|
GT80J101 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
|
GT80J101B | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT80J101A | Silicon N-Channel IGBT | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |