डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT60N321 | Silicon N-Channel IGBT GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications The 4th Generation
Unit: mm
· · · ·
FRD included between emitter and collector Enhance |
Toshiba Semiconductor |
|
GT60N321 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT60N322 | Silicon N-Channel IGBT | Toshiba Semiconductor |
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GT60N323 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |