डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT60J321 | Silicon N-Channel IGBT GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321
The 4th Generation Soft Switching Applications
Unit: mm
· · ·
Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 |
Toshiba |
|
GT60J323 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT60J321 | Silicon N-Channel IGBT | Toshiba |
|
GT60J322 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT60J323H | Silicon N-Channel IGBT | Toshiba |
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