डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT5G102 | Silicon N-Channel IGBT GT5G102
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G102
Strobe Flash Applications
Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (m |
Toshiba Semiconductor |
|
GT5G103 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
|
GT5G101 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
|
GT5G102 | Silicon N-Channel IGBT | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |