डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT50G321 | silicon N-channel IGBT GT50G321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50G321
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
· FRD included between emitter and collector |
Toshiba Semiconductor |
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GT50G321 | silicon N-channel IGBT | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |