GT43 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| GT43 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 4A ·Low Collector Saturation Voltage
: VCE(sa |
 Inchange Semiconductor |
|
| GT45F123 | Insulated Gate Bipolar Transistor |  Toshiba Semiconductor |
|
| GT40T301 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
| GT40QR21 | Silicon N-Channel IGBT |  Toshiba |
|
| GT40T101 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
|
| GT40WR21 | Silicon N-Channel IGBT | Toshiba |
|
| GT40J121 | Silicon N-Channel IGBT | Toshiba |
|
| GT40Q322 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
| GT40T302 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
| GT40Q321 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
| GT40RR21 | Silicon N-Channel IGBT |  TOSHIBA |
शेयर लिंक :
[1]
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