डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT40T301 | Silicon N-Channel IGBT GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm • • • • FRD included between emitter and collector Enhance |
Toshiba Semiconductor |
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GT40T301 | Silicon N-Channel IGBT | Toshiba Semiconductor |
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GT40T302 | Silicon N-Channel IGBT | Toshiba Semiconductor |
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