डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT40G121 | Silicon N-Channel IGBT GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
· · ·
Enhancement-mode High speed: tf = 0.3 |
Toshiba Semiconductor |
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GT40G121 | Silicon N-Channel IGBT | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |