डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT30J126 | Silicon N-Channel IGBT GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
• • • Fourth-generation IGBT Enhancement mode type Fast sw |
Toshiba |
|
GT30J126 | Silicon N-Channel IGBT | Toshiba |
|
GT30J122A | Silicon N-Channel IGBT | Toshiba |
|
GT30J122 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT30J121 | Silicon N-Channel IGBT | Toshiba Semiconductor |
|
GT30J127 | 600V 200A IGBT MOSFET | ETC |
www.DataSheet.in | 2017 | संपर्क |