डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT30 | Programmable Display GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002
Programmable Display
GT10/GT30
Technical Manual
Includes installation guide for GTWIN screen creation software.
Applic |
NAiS |
|
GT301L | Capacitive Touch Sensor The Classic of Touch Solution!
GreenTouch3TM GT301L Capacitive Touch Sensor
DATASHEET
VER2.20
www.greenchip.co.kr
Important Notice
COPYRIGHT © 2009 BY GREENCHIP INC. - ALL RIGHTS RESERVED. GREENCHIP OWNS ALL |
GreenChip |
|
GT30J101 | Silicon N-Channel IGBT GT30J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = |
Toshiba Semiconductor |
|
GT30J110SRA | Silicon N-Channel IGBT Discrete IGBTs Silicon N-Channel IGBT
GT30J110SRA
GT30J110SRA
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications • Dedicated to Soft Switching Applications • Dedicated to In |
Toshiba |
|
GT30J121 | Silicon N-Channel IGBT GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT • Enhancement mode type |
Toshiba Semiconductor |
|
GT30J122 | Silicon N-Channel IGBT www.DataSheet.co.kr
GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
• • • Enhancement mode type H |
Toshiba Semiconductor |
|
GT30J122A | Silicon N-Channel IGBT Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
No |
Toshiba |
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