डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GT20J101 | Silicon N-Channel IGBT GT20J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = |
Toshiba Semiconductor |
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GT20J101 | Silicon N-Channel IGBT | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |