डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GS66508B | Bottom-side cooled 650V E-mode GaN transistor GS66508B Bottom-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet
Features
• 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A � |
GaN Systems |
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GS66508P | 650V enhancement mode GaN transistor | GaN Systems |
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GS66508B | Bottom-side cooled 650V E-mode GaN transistor | GaN Systems |
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GS66508T | Top cooled 650V enhancement mode GaN transistor | GaN Systems |
www.DataSheet.in | 2017 | संपर्क |