डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
GDSSF230 | MOSFET DESCRIPTION
The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or |
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GDSSF2300 | MOSFET GDSSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery pro |
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GDSSF2300A | MOSFET GDSSF2300A
DESCRIPTION
The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery p |
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GDSSF2300B | MOSFET GDSSF2300B
DESCRIPTION
The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery p |
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GDSSF2301A | MOSFET GDSSF2301A
DESCRIPTION
The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load swit |
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GDSSF2301B | MOSFET GDSSF2301B
DESCRIPTION
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load swit |
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GDSSF2305 | MOSFET GDSSF2305
DESCRIPTION
The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch |
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