डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
G30 | Voltage-Controlled Attenuator Module %& &' ( )*( +, . / 0 1 2 34 5 - . / 0 1 2 34 5 *( ,* 63+%7( ) 8%+,9 : 0 7*;2 34 5 <0' &' 8 2 34 5
" , !$ "= > ?!/ " " $ "! !$ $ !? # $ # ! " ?" > = " ?! $ " #! # @ ! ! ! !$ ! # ! > >! A $ ! = !? : " 0B ! &$ 7 $ |
Tyco Electronics |
|
G3000TF250 | Anode Shorted Gate Turn-Off Thyristor Date:- 5th March 2013 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G3000TF250
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (n |
IXYS |
|
G3000TF450 | Anode Shorted Gate Turn-Off Thyristor Date:- 28th April 2013 Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor Types G3000TF450
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (n |
IXYS |
|
G3018 | N-CHANNEL MOSFET www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANNEL MOSFET
BVDSS RDS(ON) ID
30V 8 115mA
N-channel enhancement-mode MOSFET Low on-resista |
GTM |
|
G3018K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/11 REVISED DATE :
G3018K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8 640mA
The G3018K utilized advanced processing techni |
GTM |
|
G301K | N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/19 REVISED DATE :
G301K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 1 640mA
The G301K utilized advanced processing techniqu |
GTM |
|
G3067 | GaAsP photodiode |
Hamamatsu Corporation |
www.DataSheet.in | 2017 | संपर्क |