FZT958 डाटा शीट PDF( Datasheet )

Features  BVCEO > -400V  IC = -0.5A High Continuous Collector Current  ICM = -1.5A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -400mV @ -0.5A  hFE Specified up to -2A for a High Gain Ho

SMD Type Transistors PNP Transistors FZT958 (KZT958) ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-400V SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.5