FZT749 डाटा शीट PDF( Datasheet )

FZT749 Discrete Power & Signal Technologies July 1998 FZT749 C E B C SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector curre

Features  BVCEO > -25V  IC = -3A High Continuous Current  ICM = -8A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -300mV @ -1A  Complementary NPN Type: FZT649  Lead-Free Finish; RoHS C

SMD Type Transistors NPN Silicon Planar Medium Power Transistor FZT749 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features 25 Volt VCEO. 3 Amp continuous current. Low saturation voltage. Excellent hFE specified