डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FX30ASJ-03 | Pch Power MOS FET FX30ASJ-03
High-Speed Switching Use Pch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
|
Renesas |
|
FX30ASJ-03 | Pch POWER MOSFET PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX30ASJ-03
MITSUBISHI Pch POWER MOSFET
FX30ASJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5 5.0 ± 0.2 4
Dimension |
Mitsubishi Electric Semiconductor |
www.DataSheet.in | 2017 | संपर्क |