FS50 डाटा शीट PDF( Datasheet )

FEELING TECHNOLOGY LINEAR HALL-EFFECT SENSORS Features Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in SIP-3L package FS50 Pb Free General Description The FS50

TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FS500R17OE4D EconoPACK™+ModulmitTrench/FeldstoppIGBT4undEmitterControlled3DiodeundPressFIT/NTC EconoPACK™+modulewithT

FS500R17OE4DP EconoPACK™+ModulmitTrench/FeldstoppIGBT4undEmitterControlled3DiodeundPressFIT/bereits aufgetragenemThermalInterfaceMaterial EconoPACK™+modulewithTrench/FieldstopIGBT4andE

MITSUBISHI Nch POWER MOSFET FS3UM-18A HIGH-SPEED SWITCHING USE FS3UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q

MITSUBISHI Nch POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5

FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.)

MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE FS3VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 1.5MAX. 10.5MAX. 0 +0.3 –0 1 5 0.8