FQU2N60 डाटा शीट PDF( Datasheet )

FQD2N60 / FQU2N60 April 2000 QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plan

MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSF

FQD2N60C / FQU2N60C QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip