FQU10N20 डाटा शीट PDF( Datasheet )

 
 

 
 
  
 
                    

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device perfor

FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A • Low Gate

FQD10N20L / FQU10N20L December 2000 QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s