FQPF8N60 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQPF8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Re

FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability �

FQP8N60/FQPF8N60 600V,8A N-Channel MOSFET General Description Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels

FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairc

FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced u