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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQPF12N60C | N-Channel MOSFET FQPF12N60C — N-Channel QFET® MOSFET
November 2013
FQPF12N60C
N-Channel QFET® MOSFET
600 V, 12 A, 650 mΩ
Description
These N-Channel enhancement mode power field effect transistors are produced using Fai |
Fairchild Semiconductor |
|
FQPF12N60C | N-Channel MOSFET isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.65Ω(Max) ·100% avalanche tested ·M |
INCHANGE |
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