FQPF12N60 डाटा शीट PDF( Datasheet )

FQP12N60/FQPF12N60 600V,12A N-Channel MOSFET General Description Product Summary The FQP12N60 & FQPF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high l

FQPF12N60 April 2000 QFET FQPF12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS

FQPF12N60C — N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fai

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) ·100% avalanche tested ·M