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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQP50N06 | 60V N-Channel MOSFET FQP50N06
QFET
FQP50N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Thi |
Fairchild Semiconductor |
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FQP50N06 | N-Channel Power MOSFET FQP50N06
®
FQP50N06
Pb
Pb Free Plating Product
50A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typ |
Thinki Semiconductor |
|
FQP50N06 | N-Channel MOSFET isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum |
INCHANGE |
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FQP50N06L | 60V LOGIC N-Channel MOSFET FQP50N06L — N-Channel QFET® MOSFET
FQP50N06L
N-Channel QFET® MOSFET
60 V, 52.4 A, 21 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary p |
Fairchild Semiconductor |
|
FQP50N06L | N-Channel MOSFET isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |