FQP20N06 डाटा शीट PDF( Datasheet )

FQP20N06 May 2001 QFET FQP20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical appli

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max)

FQP20N06L May 2001 QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DM