डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQD50N06 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FQD50N06
·FEATURES ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
|
FQD50N06 | N-Channel MOSFET FQD50N06
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V
ID (A)a 50 45
FEATURES
• 175 °C Junction Temperature • TrenchFET® Power MOSFET |
VBsemi |
www.DataSheet.in | 2017 | संपर्क |