FQD50N06 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-t

FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET