डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FQD2N60 | 600V N-Channel MOSFET FQD2N60 / FQU2N60
April 2000
QFET
FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plan |
Fairchild Semiconductor |
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FQD2N60C | 600V N-Channel MOSFET FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) |
Fairchild Semiconductor |
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FQD2N60C | N-Channel MOSFET MOSFET – N-Channel, QFET)
600 V, 1.9 A, 4,7 W
FQD2N60C / FQU2N60C
This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSF |
ON Semiconductor |
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