FQB3N60 डाटा शीट PDF( Datasheet )

FQB3N60 / FQI3N60 April 2000 QFET FQB3N60 / FQI3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plan

FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel MOSFET Features • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast swi