FQA140N10 डाटा शीट PDF( Datasheet )

FQA140N10 September 2000 QFET FQA140N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, D

isc N-Channel MOSFET Transistor FQA140N10 FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) ·100% avalanche tes