| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cypress Semiconductor |
256-Kbit (32 K x 8) Bytewide F-RAM Memory ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliabilit |
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Ramtron |
256Kb Bytewide 5V F-RAM Memory 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No |
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