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FM1808B DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FM1808B

Cypress Semiconductor
256-Kbit (32 K x 8) Bytewide F-RAM Memory

■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (see the Data Retention and Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliabilit
Datasheet
2
FM1808B

Ramtron
256Kb Bytewide 5V F-RAM Memory
256Kbit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 38 year Data Retention (@ +75°C)
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules
• No
Datasheet



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