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FLM5964-4F   C-Band Internally Matched FET

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Fujitsu
Fujitsu
PDF
FLM5964-4F   C-Band Internally Matched FET

wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temp
Eudyna Devices
Eudyna Devices
PDF
FLM5964-4F   C-Band Internally Matched FET

FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band
SUMITOMO
SUMITOMO
PDF
FLM5964-4F-001   Internally Matched High Power GaAs FETs

SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Product Information FLM5964-4F/001 Part Number Class Outline / Package Code Frequency f (GHz) 2tone test lM3 Typ. (dBc) 2tone test @Pout S.C.L. (dBm) P1dB Typ. (dBm) G
SUMITOMO
SUMITOMO
PDF



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