डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
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Fujitsu |
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FLM5964-4F | C-Band Internally Matched FET wEudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temp |
Eudyna Devices |
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FLM5964-4F | C-Band Internally Matched FET FLM5964-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band |
SUMITOMO |
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FLM5964-4F-001 | Internally Matched High Power GaAs FETs SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Product Information
FLM5964-4F/001
Part Number Class Outline / Package Code Frequency f (GHz) 2tone test lM3 Typ. (dBc) 2tone test @Pout S.C.L. (dBm) P1dB Typ. (dBm) G |
SUMITOMO |
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