FLL200 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| FLL200 | The Relationship for Open Circuit Voltage and Residual Capacity FLL200
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Charging Characteristics(25℃) Specifications
Nominal Voltage Capacity(10Hr, 20℃) Length Width Dimension Height Tota |
 FAAM |
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| FLL200IB-1 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = |
 Eudyna Devices |
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| FLL200IB-2 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = |
Eudyna Devices |
|
| FLL200IB-3 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = |
Eudyna Devices |
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