FKV660S डाटा शीट PDF( Datasheet )

MOS FET FKV660S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +150 PW 100µs, duty 1% Unit V V A A W ºC ºC Electr

isc N-Channel MOSFET Transistor FKV660S FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) ·100% avalanche teste