डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FKV660 | MOSFET MOS FET FKV660 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 60 ± 20 ± 50 ± 150 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V |
Sanken electric |
|
FKV660S | MOSFET MOS FET FKV660S
Absolute Maximum Ratings (Ta=25ºC)
Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +150 PW 100µs, duty 1% Unit V V A A W ºC ºC
Electr |
Sanken electric |
|
FKV660S | N-Channel MOSFET isc N-Channel MOSFET Transistor
FKV660S
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 14mΩ(Max) ·100% avalanche teste |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |