FKV460 डाटा शीट PDF( Datasheet )

MOS FET FKV460 (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 +20, –10 ± 60 ± 180 Unit V V A A W ºC ºC Electrical Characteristics Sym

MOS FET FKV460FP (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 ± 20 ± 60 ± 180 Unit V V A A W ºC ºC Electrical Characteristics Symbol

isc N-Channel MOSFET Transistor FKV460S FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·100% avalanche tested

MOS FET FKV460S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VDSS 40 V VGSS +20, –10 V ID ±60 A ID (pulse)* ±180 A PD 60 (Tc=25ºC) W Tch 150 ºC Tstg –55 to +150 ºC * PW