FKP280A डाटा शीट PDF( Datasheet )

N-Channel MOS FET FKP280A September, 2005 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Package---FM100(TO3P Full Mold) ■Applications ●PDP drivin

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=280V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 53mΩ(Max) ·100% avalanche tested ·Minimu