FKP202 डाटा शीट PDF( Datasheet )

N-Channel MOS FET FKP202 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee March. 2007 ■Package---FM20 (TO220 Full Mold) ■Applications ●PDP driving ●Hi

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 53mΩ(Max) ·100% avalanche tested ·Minimu